公开(公告)号：US20250105595A1

公开(公告)日：2025-03-27

申请号：US18895048

申请日：2024-09-24

Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE

Inventor： O Kyun KWON ,  Nam Je KIM ,  Ho Sung KIM ,  Mi Ran PARK ,  Seung Chul LEE ,  Won Seok HAN

IPC: H01S5/20 ,  H01S5/026 ,  H01S5/11

Abstract: The present invention relates to a method of manufacturing a photonic integrated device based on single-step active layer epitaxial growth, and the method includes forming, on a substrate, a reference region having a first bandgap and a region having a bandgap, which is red-shifted relative to the first bandgap, through active layer epitaxial growth, and applying a blue-shift to the substrate to form a region having a second bandgap that is blue-shifted relative to the first bandgap.