公开(公告)号：US3646406A

公开(公告)日：1972-02-29

申请号：US3646406D

申请日：1970-06-30

Applicant: BELL TELEPHONE LABOR INC

Inventor： LOGAN RALPH ANDRE ,  WHITE HARRY GREGORY ,  WIEGMANN WILLIAM

IPC: H01L21/208 ,  H01L33/00 ,  H01L15/00

CPC classification number: H01L21/02625 ,  H01L21/02392 ,  H01L21/02461 ,  H01L21/02543 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/02628 ,  H01L33/00 ,  Y10S148/065 ,  Y10S148/107 ,  Y10S148/119

Abstract: An electroluminescent PN-junction diode containing isoelectronic traps is fabricated with a relatively high concentration of such traps located within a few diffusion lengths of the PN-junction and a relatively low concentration of such traps farther away from the junction. Thereby, absorption by such traps away from the junction, of radiation emitted at such traps at the junction, is minimized. In particular, a method is described for epitaxially growing such a gallium phosphide PN-junction diode with a higher concentration of isoelectronic nitrogen traps near the junction than elsewhere in the diode.