Multiaddress switch using a confined electron beam in a semiconductor
    1.
    发明授权
    Multiaddress switch using a confined electron beam in a semiconductor 失效
    在半导体中使用配置电子束的多路开关

    公开(公告)号:US3593045A

    公开(公告)日:1971-07-13

    申请号:US3593045D

    申请日:1969-12-29

    CPC classification number: H01L29/82 H01L29/00

    Abstract: This invention involves a solid state charge carrier beam deflection apparatus (solid-state equivalent of a cathode-ray tube), utilizing a high resistivity semiconductor body for the propagation medium of the beam. A relatively high electric field in the semiconductory body is utilized to propel a beam of electrons or holes in a direction from a rear surface to a front surface of the body, the beam being characterized by a confined cross section throughout the beam''s trajectory. Deflection of the beam in the body can be accomplished by transverse electric or magnetic field; detection of the beam can be accomplished by a variety of means, including ohmic contacts and Schottky barrier diodes located at the front surface of the semiconductor body.

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