IN-SITU SEMICONDUCTOR PROCESSING CHAMBER TEMPERATURE APPARATUS

    公开(公告)号:US20180366354A1

    公开(公告)日:2018-12-20

    申请号:US15964296

    申请日:2018-04-27

    Abstract: In one implementation, a showerhead assembly is provided. The showerhead assembly comprises a first electrode having a plurality of openings therethrough and a gas distribution faceplate attached to a first lower major surface of the electrode. The gas distribution plate includes a plurality of through-holes for delivering process gases to a processing chamber. The gas distribution plate is divided into a plurality of temperature-control regions. The showerhead assembly further comprises a chill plate positioned above the electrode for providing temperature control and a plurality of heat control devices to manage heat transfer within the showerhead assembly. The heat control device comprises a thermoelectric module and a heat pipe assembly coupled with the thermoelectric module. Each of the plurality of heat control devices is associated with a temperature control region and provides independent temperature control to its associated temperature control region.

    SYMMETRIC SEMICONDUCTOR PROCESSING CHAMBER

    公开(公告)号:US20230020539A1

    公开(公告)日:2023-01-19

    申请号:US17374808

    申请日:2021-07-13

    Inventor: Yogananda SARODE

    Abstract: In one example, a flow module. The flow module has an inner wall and an outer wall equal-distant from the central axis. The flow module has radial walls connected between the outer wall and the inner wall, wherein the outer wall, inner wall and two or more pairs of radial walls define evacuation channels and a center portion. The center portion and evacuation channels are fluidly isolated from each other in the flow module. Two or more through holes are formed through the outer wall and fluidly coupled to the center portion. At least two of the two or more through holes are 180 degrees apart and linearly aligned through the central axis.

    SYMMETRIC SEMICONDUCTOR PROCESSING CHAMBER
    4.
    发明公开

    公开(公告)号:US20240170262A1

    公开(公告)日:2024-05-23

    申请号:US18429110

    申请日:2024-01-31

    Inventor: Yogananda SARODE

    Abstract: A processing chamber and a processing platform having the same are provided. In one example, the processing chamber includes a process module enclosing a process region, a flow module, a chassis, and a substrate support assembly. The flow module includes four pairs of radial walls connecting outer walls and inner walls of the flow module. The outer, inner and radial walls define four evacuation channels and a center portion. The center portion and evacuation channels fluidly are isolated from each other. The flow module includes four through holes formed 90 degrees apart through the outer wall that are fluidly coupled to the center portion. The chassis is sealingly coupled to the inner wall of the flow module. The substrate support assembly is disposed in the process region to support a substrate therein, wherein an interior of the substrate support assembly is accessible through the four through holes.

    IN-SITU SEMICONDUCTOR PROCESSING CHAMBER TEMPERATURE APPARATUS

    公开(公告)号:US20220076972A1

    公开(公告)日:2022-03-10

    申请号:US17477750

    申请日:2021-09-17

    Abstract: Methods and systems for in-situ temperature control are provided. The method includes delivering a temperature-sensing disc into a processing region of a processing chamber without breaking vacuum. The temperature-sensing disc includes one or more cameras configured to perform IR-based imaging. The method further includes measuring a temperature of at least one region of at least one chamber surface in the processing region of the processing chamber by imaging the at least one surface using the temperature-sensing disc. The method further includes comparing the measured temperature to a desired temperature to determine a temperature difference. The method further includes adjusting a temperature of the at least one chamber surface to compensate for the temperature difference.

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