公开(公告)号：US20250130500A1

公开(公告)日：2025-04-24

申请号：US18923789

申请日：2024-10-23

Applicant: Applied Materials, Inc.

Inventor： Sudha RATHI ,  Rui WANG ,  Pramit MANNA ,  Karthik JANAKIRAMAN

IPC: G03F7/16 ,  H01J37/32

Abstract: The present disclosure generally relates to semiconductor processing and, in particular, provides methods of forming a resist underlayer on a substrate for use in EUV lithography processing. In an embodiment, the method includes flowing a precursor gas mixture into the processing region of the process chamber, applying a pulsed RF power to the precursor gas mixture to generate a plasma in the processing region, depositing a resist underlayer on the substrate with the plasma generated from the pulsed RF power, and forming a patterned chemically amplified photoresist (CAR) over the resist underlayer.