公开(公告)号：US20220262643A1

公开(公告)日：2022-08-18

申请号：US17179103

申请日：2021-02-18

Applicant: Applied Materials, Inc.

Inventor： Krishna NITTALA ,  Sarah Michelle BOBEK ,  Kwangduk Douglas LEE ,  Ratsamee LIMDULPAIBOON ,  Dimitri KIOUSSIS ,  Karthik JANAKIRAMAN

IPC: H01L21/308 ,  H01L21/324 ,  H01L21/3065 ,  H01L21/67

Abstract: Aspects generally relate to methods, systems, and apparatus for processing substrates using one or more amorphous carbon hardmask layers. In one aspect, film stress is altered while facilitating enhanced etch selectivity. In one implementation, a method of processing a substrate includes depositing one or more amorphous carbon hardmask layers onto the substrate, and conducting a rapid thermal anneal operation on the substrate after depositing the one or more amorphous carbon hardmask layers. The rapid thermal anneal operation lasts for an anneal time that is 60 seconds or less. The rapid thermal anneal operation includes heating the substrate to an anneal temperature that is within a range of 600 degrees Celsius to 1,000 degrees Celsius. The method includes etching the substrate after conducting the rapid thermal anneal operation.

公开(公告)号：US20230317463A1

公开(公告)日：2023-10-05

申请号：US18206037

申请日：2023-06-05

Applicant: Applied Materials, Inc.

Inventor： Krishna NITTALA ,  Sarah Michelle BOBEK ,  Kwangduk Douglas LEE ,  Ratsamee LIMDULPAIBOON ,  Dimitri KIOUSSIS ,  Karthik JANAKIRAMAN

IPC: H01L21/308 ,  H01L21/324 ,  H01L21/67 ,  H01L21/3065

CPC classification number: H01L21/3081 ,  H01L21/324 ,  H01L21/67069 ,  H01L21/67207 ,  H01L21/67115 ,  H01L21/3065

Abstract: Aspects generally relate to methods, systems, and apparatus for processing substrates using one or more amorphous carbon hardmask layers. In one aspect, film stress is altered while facilitating enhanced etch selectivity. In one implementation, a method of processing a substrate includes depositing one or more amorphous carbon hardmask layers onto the substrate, and conducting a rapid thermal anneal operation on the substrate after depositing the one or more amorphous carbon hardmask layers. The rapid thermal anneal operation lasts for an anneal time that is 60 seconds or less. The rapid thermal anneal operation includes heating the substrate to an anneal temperature that is within a range of 600 degrees Celsius to 1,000 degrees Celsius. The method includes etching the substrate after conducting the rapid thermal anneal operation.