公开(公告)号：US20140011339A1

公开(公告)日：2014-01-09

申请号：US13929496

申请日：2013-06-27

Applicant: Applied Materials, Inc.

Inventor： Bo ZHENG ,  Avgerinos V. GELATOS ,  Ahmed KHALED

IPC: H01L21/3065

CPC classification number: H01L21/3065 ,  H01L21/02046 ,  H01L21/02057

Abstract: Native oxides and residue are removed from surfaces of a substrate by performing a hydrogen remote plasma process on the substrate. In one embodiment, the method for removing native oxides from a substrate includes transferring a substrate containing native oxide disposed on a material layer into a processing chamber, wherein the material layer includes a Ge containing layer or a III-V compound containing layer, supplying a gas mixture including a hydrogen containing gas from a remote plasma source into the processing chamber, and activating the native oxide by the hydrogen containing gas to remove the oxide layer from the substrate.

Abstract translation: 通过在衬底上执行氢远距离等离子体处理，从衬底的表面除去天然氧化物和残余物。 在一个实施方案中，从衬底去除天然氧化物的方法包括将包含设置在材料层上的天然氧化物的衬底转移到处理室中，其中所述材料层包括含Ge层或含III-V族化合物的层， 气体混合物，其包括来自远程等离子体源的含氢气体进入处理室，以及通过含氢气体活化天然氧化物以从衬底去除氧化物层。