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公开(公告)号:US10204732B2
公开(公告)日:2019-02-12
申请号:US15179741
申请日:2016-06-10
Applicant: Analog Devices Global
Inventor: Patrick J. Murphy , Stephen O'Brien , Sarah Carroll , Bernard P. Stenson , Conor John Mcloughlin , Michal J. Osiak
IPC: H01F5/00 , H01F27/28 , H01L33/44 , H01L33/62 , H01B3/12 , H01B3/30 , H01B17/62 , H01B19/04 , H01F41/04
Abstract: An isolator device is provided comprising a body of first dielectric material between the first and second conductors, such as primary and secondary coils of a micro-transformer. A region of second dielectric material is provided between the body of first dielectric material and at least one of the first and second electrodes, wherein the second dielectric material has a higher relative permittivity than the first dielectric material. This provides enhances ability to withstand the Electric fields generated at the edge of a conductor. The body of the first dielectric can be tapered to provide stress relief to prevent the second dielectric material developing stress cracks.
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公开(公告)号:US20170117084A1
公开(公告)日:2017-04-27
申请号:US15179741
申请日:2016-06-10
Applicant: Analog Devices Global
Inventor: Patrick J. Murphy , Stephen O'Brien , Sarah Carroll , Bernard P. Stenson , Conor John Mcloughlin , Michal J. Osiak
CPC classification number: H01F27/2804 , H01B3/12 , H01B3/306 , H01B17/62 , H01B19/04 , H01F5/00 , H01F41/041 , H01L33/44 , H01L33/62
Abstract: An isolator device is provided comprising a body of first dielectric material between the first and second conductors, such as primary and secondary coils of a micro-transformer. A region of second dielectric material is provided between the body of first dielectric material and at least one of the first and second electrodes, wherein the second dielectric material has a higher relative permittivity than the first dielectric material. This provides enhances ability to withstand the Electric fields generated at the edge of a conductor. The body of the first dielectric can be tapered to provide stress relief to prevent the second dielectric material developing stress cracks.
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