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公开(公告)号:US20240267644A1
公开(公告)日:2024-08-08
申请号:US18634063
申请日:2024-04-12
Applicant: APPLE INC.
Inventor: Emanuele MANDELLI , Andrew K. McMAHON , Nikolai E. BOCK
IPC: H04N25/53 , H01L27/146 , H04N25/46 , H04N25/47 , H04N25/707 , H04N25/709
CPC classification number: H04N25/53 , H04N25/46 , H04N25/47 , H04N25/707 , H04N25/709 , H01L27/14643 , H01L27/14665
Abstract: Various implementations disclosed herein include devices, systems, and methods implemented by an electronic device with an imaging sensor including a plurality of pixels (e.g., a matrix of pixels) that each are capable of detecting illumination intensity or contrast change using at least one shared photosensor. In some implementations, the imaging sensor is capable of operating in a first illumination intensity detecting mode (e.g., in a frame-based camera mode) or in a second contrast change detecting mode (e.g., in an event camera mode). In some implementations, the first illumination intensity detecting mode and the second contrast change detecting mode are mutually exclusive. In some implementations, pixels at an imaging sensor include two transfer transistors (e.g., gates) where a first transfer transistor allows intensity detection, and a second transfer transistor allows contrast change detection.
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公开(公告)号:US20220141403A1
公开(公告)日:2022-05-05
申请号:US17578601
申请日:2022-01-19
Applicant: APPLE INC.
Inventor: Emanuele MANDELLI , Andrew K. McMAHON , Nikolai E. BOCK
Abstract: Various implementations disclosed herein include devices, systems, and methods implemented by an electronic device with an imaging sensor including a plurality of pixels (e.g., a matrix of pixels) that each are capable of detecting illumination intensity or contrast change using at least one shared photosensor. In some implementations, the imaging sensor is capable of operating in a first illumination intensity detecting mode (e.g., in a frame-based camera mode) or in a second contrast change detecting mode (e.g., in an event camera mode). In some implementations, the first illumination intensity detecting mode and the second contrast change detecting mode are mutually exclusive. In some implementations, pixels at an imaging sensor include two transfer transistors (e.g., gates) where a first transfer transistor allows intensity detection, and a second transfer transistor allows contrast change detection.
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