公开(公告)号：US06673706B2

公开(公告)日：2004-01-06

申请号：US10023982

申请日：2001-12-21

Applicant: Ji-yong Yoo ,  Dae-youp Lee ,  Jeung-woo Lee ,  Suk-joo Lee ,  Jae-han Lee

Inventor： Ji-yong Yoo ,  Dae-youp Lee ,  Jeung-woo Lee ,  Suk-joo Lee ,  Jae-han Lee

IPC: H01L213205

CPC classification number: H01L21/0274 ,  G03F7/0035 ,  H01L21/76802 ,  H01L21/76829

Abstract: A photoresist pattern is formed, without being exposed, by using photoresist having a residual layer proportion characteristic by which the photoresist dissolves at a suitable rate in a developing solution. First, a target layer to be patterned and a photoresist layer are sequentially formed on a substrate having a pattern that defines a step on the substrate. Some of the photoresist layer is treated with the developing solution, to thereby form a photoresist pattern whose upper surface is situated beneath the step and hence, exposes part of the target layer. Next, the exposed part of the target layer, and the photoresist pattern are removed. A silicidation process may be carried out thereafter on the area(s) from which the target layer has been removed. The method is relatively simple because it does not involve an exposure process. Furthermore, the method can be used to manufacture devices having very fine linewidths, i.e., a small design rule, because it is not subject to the misalignment errors which can occur during a conventional exposure process.

Abstract translation: 通过使用具有残留层比例特性的光致抗蚀剂形成光致抗蚀剂图案，其中光致抗蚀剂以合适的速率溶解在显影溶液中。 首先，在具有限定基板上的台阶的图案的基板上依次形成待图案化的目标层和光致抗蚀剂层。 用显影液处理一些光致抗蚀剂层，从而形成上表面位于台阶之下的光致抗蚀剂图案，从而露出目标层的一部分。 接下来，去除目标层的曝光部分和光刻胶图案。 此后可以在去除了目标层的区域上进行硅化处理。 该方法相对简单，因为它不涉及曝光过程。 此外，该方法可以用于制造具有非常细线宽的装置，即小的设计规则，因为它不会受到常规曝光过程中可能发生的未对准误差的影响。