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公开(公告)号：CN101821834A
公开(公告)日：2010-09-01
申请号：CN200880110828.5
申请日：2008-10-07
Applicant: 日立化成工业株式会社
IPC: H01L21/301 , H01L21/304 , H01L21/52
CPC classification number: H01L21/67132 , H01L21/6835 , H01L21/6836 , H01L21/78 , H01L23/3121 , H01L24/27 , H01L24/29 , H01L24/48 , H01L24/73 , H01L24/83 , H01L24/85 , H01L2221/68322 , H01L2221/68327 , H01L2221/68336 , H01L2224/274 , H01L2224/29006 , H01L2224/2919 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/73265 , H01L2224/83191 , H01L2224/83855 , H01L2224/8388 , H01L2224/83885 , H01L2224/85 , H01L2224/92247 , H01L2924/00014 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01012 , H01L2924/01013 , H01L2924/01015 , H01L2924/01019 , H01L2924/0102 , H01L2924/01027 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01051 , H01L2924/01082 , H01L2924/0665 , H01L2924/07802 , H01L2924/09701 , H01L2924/10329 , H01L2924/12042 , H01L2924/15747 , H01L2924/15788 , H01L2924/181 , H01L2924/00 , H01L2924/3512 , H01L2924/00012 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
Abstract: 本发明提供一种带粘接膜半导体芯片的制造方法，其具备以下工序：准备层叠体的工序，其至少将由多个半导体芯片构成的分割完成的半导体晶片、半导体用粘接膜和切割带进行层叠，所述由多个半导体芯片构成的分割完成的半导体晶片是通过在半导体晶片的一个面上以比半导体晶片的厚度小的深度形成将半导体晶片区分成多个半导体芯片的切痕、并将半导体晶片的未形成切痕的另一个面研削至达到所述切痕而得到的，所述半导体用粘接膜具有1～15μm范围的厚度、具有小于5％的拉伸断裂伸长率、且该拉伸断裂伸长率小于最大负荷时的伸长率的110％；将多个半导体芯片分别沿层叠体的层叠方向拾起，从而分割半导体用粘接膜，得到带粘接膜半导体芯片的工序。
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公开(公告)号：CN101647096A
公开(公告)日：2010-02-10
申请号：CN200880010712.4
申请日：2008-03-31
Applicant: 日立化成工业株式会社
IPC: H01L21/301 , C09J7/00 , C09J201/00 , H01L21/52
CPC classification number: C09J201/00 , B23K26/364 , B23K26/40 , B23K26/53 , B23K2101/40 , B23K2103/172 , B23K2103/50 , B28D5/0082 , H01L21/67132 , H01L21/6835 , H01L21/6836 , H01L21/78 , H01L24/27 , H01L24/73 , H01L24/83 , H01L25/50 , H01L2221/68327 , H01L2221/68336 , H01L2224/274 , H01L2224/29006 , H01L2224/2919 , H01L2224/32145 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/73265 , H01L2224/83191 , H01L2224/8385 , H01L2224/92247 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01012 , H01L2924/01013 , H01L2924/01015 , H01L2924/0102 , H01L2924/01027 , H01L2924/01029 , H01L2924/01033 , H01L2924/01045 , H01L2924/01047 , H01L2924/01051 , H01L2924/01077 , H01L2924/01082 , H01L2924/014 , H01L2924/0665 , H01L2924/07802 , H01L2924/09701 , H01L2924/10253 , H01L2924/10329 , H01L2924/12042 , H01L2924/15747 , H01L2924/15788 , H01L2924/181 , Y10T428/28 , H01L2924/00014 , H01L2924/00 , H01L2924/00012 , H01L2924/3512
Abstract: 本发明提供既能够充分抑制芯片裂纹及毛刺的发生又能够从半导体晶片获得高合格率的半导体芯片的方法。该半导体芯片的制造方法具有以下工序：准备层叠体的工序，该层叠体顺次层叠半导体晶片、半导体用粘接膜以及切割胶带，从上述半导体晶片侧形成切槽，以使上述半导体晶片被分割为多个半导体芯片、并且上述半导体用粘接膜在厚度方向上的至少一部分不被切断而保留；以及将上述切割胶带在上述多个半导体芯片相互分离的方向上进行拉伸，由此沿着上述切槽来分割上述半导体用粘接膜的工序。上述半导体用粘接膜具有小于5％的拉伸断裂伸度，该拉伸断裂伸度小于最大负荷时的伸度的110％。
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公开(公告)号：CN100351337C
公开(公告)日：2007-11-28
申请号：CN200410098048.7
申请日：2001-02-15
Applicant: 日立化成工业株式会社
IPC: C09J163/00 , H01L21/52 , H01L21/58
Abstract: 一种粘接剂组合物及其制造方法，该组合物由环氧树脂(a)、固化剂(b)、以及与环氧树脂为非相溶的高分子化合物(c)所组成，必要时还包括填充剂(d)或/和固化促进剂(e)；其制造方法为：先混合环氧树脂(a)以及固化剂(b)与填充剂(d)，再混合与环氧树脂系为非相溶的高分子化合物(c)于该混合物。本发明还涉及将上述粘接剂组合物制成薄膜状而形成的粘接薄膜、于电路基板的芯片装载面设置有该粘接薄膜的半导体装载用基板、以及使用该粘接薄膜或半导体装载用基板的半导体装置。
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公开(公告)号：CN101821833B
公开(公告)日：2012-04-04
申请号：CN200880110812.4
申请日：2008-10-07
Applicant: 日立化成工业株式会社
IPC: H01L21/301 , H01L21/52
CPC classification number: H01L21/67132 , B23K26/40 , B23K26/53 , B23K2101/40 , B23K2103/50 , B28D5/0011 , B28D5/0052 , H01L21/6836 , H01L21/78 , H01L23/3121 , H01L24/27 , H01L24/29 , H01L24/48 , H01L24/73 , H01L24/83 , H01L2221/68336 , H01L2224/274 , H01L2224/2919 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/73265 , H01L2224/83191 , H01L2224/83855 , H01L2224/8388 , H01L2224/83885 , H01L2224/92247 , H01L2924/00014 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01012 , H01L2924/01013 , H01L2924/01015 , H01L2924/01019 , H01L2924/0102 , H01L2924/01027 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01051 , H01L2924/01082 , H01L2924/0665 , H01L2924/07802 , H01L2924/09701 , H01L2924/10156 , H01L2924/10329 , H01L2924/12041 , H01L2924/12042 , H01L2924/15747 , H01L2924/15788 , H01L2924/181 , H01L2924/00 , H01L2924/3512 , H01L2924/00012 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
Abstract: 本发明提供一种带粘接膜半导体芯片的制造方法，其具备以下工序：准备层叠体的工序，其将半导体晶片、半导体用粘接膜及切割带以所述顺序层叠，其中，半导体用粘接膜具有1～15μm范围的厚度、具有小于5％的拉伸断裂伸长率、且该拉伸断裂伸长率小于最大负荷时的伸长率的110％，所述半导体晶片具有由激光照射而形成的用于将所述半导体晶片分割为多个半导体芯片的改性部；将切割带沿多个半导体芯片相互分离的方向拉伸，从而不分割所述半导体用粘接膜地将所述半导体晶片分割为所述多个半导体芯片的工序；以及将多个半导体芯片分别沿层叠体的层叠方向拾起，从而分割半导体用粘接膜，得到带粘接膜半导体芯片的工序。
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公开(公告)号：CN101266925B
公开(公告)日：2010-07-07
申请号：CN200810095237.7
申请日：2004-06-10
Applicant: 日立化成工业株式会社
CPC classification number: H01L21/6835 , C09J7/10 , C09J7/35 , C09J2201/36 , C09J2463/00 , C09J2479/08 , H01L21/67132 , H01L21/6836 , H01L24/27 , H01L24/73 , H01L24/83 , H01L2221/68327 , H01L2221/6839 , H01L2221/68395 , H01L2224/274 , H01L2224/27436 , H01L2224/2919 , H01L2224/32145 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/73265 , H01L2224/8319 , H01L2224/83856 , H01L2224/8388 , H01L2224/83885 , H01L2224/92 , H01L2224/92247 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01012 , H01L2924/01013 , H01L2924/01015 , H01L2924/01019 , H01L2924/0102 , H01L2924/01023 , H01L2924/01025 , H01L2924/01027 , H01L2924/01029 , H01L2924/01033 , H01L2924/01045 , H01L2924/01047 , H01L2924/01067 , H01L2924/01075 , H01L2924/01077 , H01L2924/01079 , H01L2924/01082 , H01L2924/01084 , H01L2924/014 , H01L2924/04953 , H01L2924/0665 , H01L2924/07802 , H01L2924/09701 , H01L2924/10253 , H01L2924/14 , H01L2924/15311 , H01L2924/15747 , H01L2924/181 , H01L2924/351 , H01L2924/00 , H01L2924/00012 , H01L2924/3512 , H01L2924/00014
Abstract: 本发明的目的在于提供一种膜状粘接剂、贴合该膜状粘接剂和切割胶带而形成的粘接片以及半导体装置，所述膜状粘接剂能够以较极薄晶片的保护胶带或者贴合的切割胶带的软化温度低的温度在晶片背面层积，并且可以降低晶片翘曲等的热应力，可以简化半导体装置的制造工序，进而耐热性及耐湿可靠性也优异。
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Patent Agency Ranking
公开(公告)号：CN101473425A
公开(公告)日：2009-07-01
申请号：CN200780023296.7
申请日：2007-06-20
Applicant: 日立化成工业株式会社
IPC: H01L21/60 , H01L21/301 , H01L21/683
CPC classification number: H01L21/6835 , H01L21/67092 , H01L21/78 , H01L24/27 , H01L24/29 , H01L24/75 , H01L24/81 , H01L24/83 , H01L24/90 , H01L2221/6834 , H01L2223/54426 , H01L2223/54473 , H01L2224/0554 , H01L2224/05568 , H01L2224/05573 , H01L2224/05624 , H01L2224/13144 , H01L2224/16225 , H01L2224/274 , H01L2224/2919 , H01L2224/32225 , H01L2224/73104 , H01L2224/73204 , H01L2224/81121 , H01L2224/81191 , H01L2224/81193 , H01L2224/81205 , H01L2224/81801 , H01L2224/83191 , H01L2224/838 , H01L2224/83851 , H01L2224/83885 , H01L2924/00014 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01023 , H01L2924/01029 , H01L2924/01033 , H01L2924/01041 , H01L2924/01045 , H01L2924/01046 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/01052 , H01L2924/01058 , H01L2924/01077 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/0665 , H01L2924/07811 , H01L2924/15788 , H01L2924/00 , H01L2924/3512 , H01L2224/05599 , H01L2224/0555 , H01L2224/0556
Abstract: 本发明提供一种半导体装置的制造方法，该方法在高效地获得附有粘结剂的半导体芯片单片的同时，可以使半导体芯片与配线基板良好地连接。该制造方法，经过以半导体晶片(6)的电路面(6a)向着切割带(9)一侧的方式而将由切割带(9)、粘结剂层(3)以及半导体晶片(6)按照这一顺序叠层所得的层压体(60)的准备工序，从与所述半导体晶片(6)的反面(6b)识别所述电路面(6a)的电路图案(P)进而识别切割位置的工序，至少将所述半导体晶片(6)以及所述粘结剂层(3)在所述层压体(60)的厚度方向上切割的工序，得到连接于配线基板的半导体芯片单片，由此防止半导体芯片的污染，而且可以防止由飞散、流出引起的丢失。
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公开(公告)号：CN101266925A
公开(公告)日：2008-09-17
申请号：CN200810095237.7
申请日：2004-06-10
Applicant: 日立化成工业株式会社
CPC classification number: H01L21/6835 , C09J7/10 , C09J7/35 , C09J2201/36 , C09J2463/00 , C09J2479/08 , H01L21/67132 , H01L21/6836 , H01L24/27 , H01L24/73 , H01L24/83 , H01L2221/68327 , H01L2221/6839 , H01L2221/68395 , H01L2224/274 , H01L2224/27436 , H01L2224/2919 , H01L2224/32145 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/73265 , H01L2224/8319 , H01L2224/83856 , H01L2224/8388 , H01L2224/83885 , H01L2224/92 , H01L2224/92247 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01012 , H01L2924/01013 , H01L2924/01015 , H01L2924/01019 , H01L2924/0102 , H01L2924/01023 , H01L2924/01025 , H01L2924/01027 , H01L2924/01029 , H01L2924/01033 , H01L2924/01045 , H01L2924/01047 , H01L2924/01067 , H01L2924/01075 , H01L2924/01077 , H01L2924/01079 , H01L2924/01082 , H01L2924/01084 , H01L2924/014 , H01L2924/04953 , H01L2924/0665 , H01L2924/07802 , H01L2924/09701 , H01L2924/10253 , H01L2924/14 , H01L2924/15311 , H01L2924/15747 , H01L2924/181 , H01L2924/351 , H01L2924/00 , H01L2924/00012 , H01L2924/3512 , H01L2924/00014
Abstract: 本发明的目的在于提供一种膜状粘接剂、贴合该膜状粘接剂和切割胶带而形成的粘接片以及半导体装置，所述膜状粘接剂能够以较极薄晶片的保护胶带或者贴合的切割胶带的软化温度低的温度在晶片背面层积，并且可以降低晶片翘曲等的热应力，可以简化半导体装置的制造工序，进而耐热性及耐湿可靠性也优异。
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公开(公告)号：CN102361016A
公开(公告)日：2012-02-22
申请号：CN201110314139.X
申请日：2008-10-07
Applicant: 日立化成工业株式会社
CPC classification number: H01L21/67132 , B23K26/40 , B23K26/53 , B23K2101/40 , B23K2103/50 , B28D5/0011 , B28D5/0052 , H01L21/6836 , H01L21/78 , H01L23/3121 , H01L24/27 , H01L24/29 , H01L24/48 , H01L24/73 , H01L24/83 , H01L2221/68336 , H01L2224/274 , H01L2224/2919 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/73265 , H01L2224/83191 , H01L2224/83855 , H01L2224/8388 , H01L2224/83885 , H01L2224/92247 , H01L2924/00014 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01012 , H01L2924/01013 , H01L2924/01015 , H01L2924/01019 , H01L2924/0102 , H01L2924/01027 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01051 , H01L2924/01082 , H01L2924/0665 , H01L2924/07802 , H01L2924/09701 , H01L2924/10156 , H01L2924/10329 , H01L2924/12041 , H01L2924/12042 , H01L2924/15747 , H01L2924/15788 , H01L2924/181 , H01L2924/00 , H01L2924/3512 , H01L2924/00012 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
Abstract: 本发明提供一种带粘接膜半导体芯片的制造方法中使用的半导体用粘接膜，所述制造方法具备以下工序：准备层叠体的工序，其将半导体晶片、半导体用粘接膜及切割带以所述顺序层叠，其中，半导体用粘接膜具有1～15μm范围的厚度、具有小于5％的拉伸断裂伸长率、且该拉伸断裂伸长率小于最大负荷时的伸长率的110％，所述半导体晶片具有由激光照射而形成的用于将所述半导体晶片分割为多个半导体芯片的改性部；将切割带沿多个半导体芯片相互分离的方向拉伸，从而不分割所述半导体用粘接膜地将所述半导体晶片分割为所述多个半导体芯片的工序；以及将多个半导体芯片分别沿层叠体的层叠方向拾起，从而分割半导体用粘接膜，得到带粘接膜半导体芯片的工序。
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公开(公告)号：CN102134451A
公开(公告)日：2011-07-27
申请号：CN201110040150.1
申请日：2008-03-31
Applicant: 日立化成工业株式会社
IPC: C09J7/00 , C09J179/08 , C09J183/10 , C09J7/02 , H01L21/58 , H01L21/68 , H01L21/78 , H01L23/29
CPC classification number: C09J183/10 , C08G73/106 , C08G77/26 , C08G77/452 , C09D183/08 , C09J179/08 , C09J183/08 , H01L21/67132 , H01L21/6835 , H01L21/78 , H01L23/296 , H01L24/27 , H01L24/29 , H01L24/48 , H01L24/73 , H01L24/83 , H01L25/50 , H01L2224/274 , H01L2224/29006 , H01L2224/2919 , H01L2224/32145 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/73265 , H01L2224/83191 , H01L2224/8385 , H01L2224/92247 , H01L2924/00014 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01012 , H01L2924/01013 , H01L2924/01015 , H01L2924/0102 , H01L2924/01023 , H01L2924/01027 , H01L2924/01029 , H01L2924/01033 , H01L2924/01045 , H01L2924/01047 , H01L2924/01051 , H01L2924/01058 , H01L2924/01077 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/0665 , H01L2924/07802 , H01L2924/09701 , H01L2924/10253 , H01L2924/10329 , H01L2924/12042 , H01L2924/12044 , H01L2924/15747 , H01L2924/15788 , H01L2924/181 , Y10T428/2826 , Y10T428/2896 , H01L2924/07025 , H01L2924/00 , H01L2924/00012 , H01L2924/3512 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
Abstract: 本发明提供一种半导体用粘接膜，其能够在低温下贴附在半导体晶片，可以在充分地抑制芯片裂纹或毛刺的产生的同时，以良好的产品合格率由半导体晶片得到半导体芯片。本发明的半导体用粘接膜含有聚酰亚胺树脂，可以利用含有由下述化学式(I)表示的4，4’-氧双邻苯二甲酸酐的四羧酸二酐；与含有由下述通式(II)表示的硅氧烷二胺的二胺的反应得到，能够在100℃以下贴附在半导体晶片。
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公开(公告)号：CN100393835C
公开(公告)日：2008-06-11
申请号：CN200480016096.5
申请日：2004-06-10
Applicant: 日立化成工业株式会社
IPC: C09J7/00 , C09J7/02 , H01L21/52 , H01L21/301
CPC classification number: H01L21/6835 , C09J7/10 , C09J7/35 , C09J2201/36 , C09J2463/00 , C09J2479/08 , H01L21/67132 , H01L21/6836 , H01L24/27 , H01L24/73 , H01L24/83 , H01L2221/68327 , H01L2221/6839 , H01L2221/68395 , H01L2224/274 , H01L2224/27436 , H01L2224/2919 , H01L2224/32145 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/73265 , H01L2224/8319 , H01L2224/83856 , H01L2224/8388 , H01L2224/83885 , H01L2224/92 , H01L2224/92247 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01012 , H01L2924/01013 , H01L2924/01015 , H01L2924/01019 , H01L2924/0102 , H01L2924/01023 , H01L2924/01025 , H01L2924/01027 , H01L2924/01029 , H01L2924/01033 , H01L2924/01045 , H01L2924/01047 , H01L2924/01067 , H01L2924/01075 , H01L2924/01077 , H01L2924/01079 , H01L2924/01082 , H01L2924/01084 , H01L2924/014 , H01L2924/04953 , H01L2924/0665 , H01L2924/07802 , H01L2924/09701 , H01L2924/10253 , H01L2924/14 , H01L2924/15311 , H01L2924/15747 , H01L2924/181 , H01L2924/351 , H01L2924/00 , H01L2924/00012 , H01L2924/3512 , H01L2924/00014
Abstract: 本发明的目的在于提供一种膜状粘接剂、贴合该膜状粘接剂和切割胶带而形成的粘接片以及半导体装置，所述膜状粘接剂能够以较极薄晶片的保护胶带或者贴合的切割胶带的软化温度低的温度在晶片背面层积，并且可以降低晶片翘曲等的热应力，可以简化半导体装置的制造工序，进而耐热性及耐湿可靠性也优异。
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