- 专利标题： Semiconductor device including tungsten gate and manufacturing method thereof
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申请号： US15281296申请日： 2016-09-30
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公开(公告)号： US09991362B2公开(公告)日： 2018-06-05
- 发明人: Yu-Sheng Wang , Chi-Cheng Hung , Chia-Ching Lee , Chung-Chiang Wu
- 申请人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- 申请人地址： TW Hsinchu
- 专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- 当前专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- 当前专利权人地址： TW Hsinchu
- 代理机构： McDermott Will & Emery LLP
- 主分类号： H01L29/66
- IPC分类号： H01L29/66 ; H01L29/49 ; H01L21/285
摘要：
In a method of manufacturing a tungsten layer by an atomic layer deposition, a seed layer on an underlying layer is formed on a substrate by supplying a boron containing gas and a dilute gas, and a tungsten layer is formed on the seed layer by supplying a tungsten containing gas. A flow ratio of a flow amount of the boron containing gas to a total flow amount of the boron containing gas and the dilute gas is in a range from 1/21 to 1/4.
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