- 专利标题： Redistribution layer structure, semiconductor substrate structure, semiconductor package structure, chip structure, and method of manufacturing the same
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申请号： US14919343申请日： 2015-10-21
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公开(公告)号： US09955590B2公开(公告)日： 2018-04-24
- 发明人: Chao-Fu Weng
- 申请人： Advanced Semiconductor Engineering, Inc.
- 申请人地址： TW Kaosiung
- 专利权人： ADVANCED SEMICONDUCTOR ENGINEERING, INC.
- 当前专利权人： ADVANCED SEMICONDUCTOR ENGINEERING, INC.
- 当前专利权人地址： TW Kaosiung
- 代理机构： Foley & Lardner LLP
- 主分类号： H05K3/46
- IPC分类号： H05K3/46 ; H05K1/11 ; H01L23/20 ; H05K3/10 ; H01L23/00
摘要：
The present disclosure relates to redistribution layer structures useful in semiconductor substrate packages, semiconductor package structures, and chip structures. In an embodiment, a redistribution layer structure includes a dielectric layer, an anti-plating layer, and a conductive material. The dielectric layer defines one or more trenches. The conductive material is disposed in the trench(es), and the anti-plating layer is disposed on a surface of the dielectric layer.
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