Frequency characteristics of a peaking stage can vary depending on variations in the process used to fabricate the peaking stage. For example, depending on the batch of wafers and where on a wafer the peaking stage is formed, the capacitors and resistors may have different values, thereby changing the frequency characteristics of the peaking stage. The embodiments herein describe a peaking stage that is invariant of the process variation. That is, one or more of the frequency characteristics of the peaking stages do not vary as the values of a capacitor or resistor change. As such, peaking stages formed in different process corners on the wafer have the same frequency characteristics, and thus, function in a similar manner.