- 专利标题: System for implementation of I2t trip characteristic
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申请号: US14923372申请日: 2015-10-26
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公开(公告)号: US09954351B2公开(公告)日: 2018-04-24
- 发明人: Anhtai Le Tran , Imtiaz Khan
- 申请人: LEACH INTERNATIONAL CORPORATION
- 申请人地址: US CA Buena Park
- 专利权人: LEACH INTERNATIONAL CORPORATION
- 当前专利权人: LEACH INTERNATIONAL CORPORATION
- 当前专利权人地址: US CA Buena Park
- 代理机构: Lewis Roca Rothgerber Christie LLP
- 主分类号: H02H3/00
- IPC分类号: H02H3/00 ; H02H3/08
摘要:
There is provided a protection circuit configured to indicate an overcurrent condition of a conductor conducting a load current, the protection circuit including a first current integrator and a second current integrator, each of the first and second integrators being configured to integrate an input voltage proportional to the load current, a summing amplifier configured to receive an offset voltage, to amplify a signal from the second integrator, and to generate a trip threshold based on the input voltage and the offset voltage, and a comparator configured to compare an output of the first current integrator and the trip threshold, and to generate a trip signal at a trip time when the trip threshold is equal to an output of the first integrator, the trip signal indicating an overcurrent condition.
公开/授权文献
- US20170117698A1 SYSTEM FOR IMPLEMENTATION OF I2T TRIP CHARACTERISTIC 公开/授权日:2017-04-27
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