- 专利标题: Electronic device and manufacturing method thereof
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申请号: US14484295申请日: 2014-09-12
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公开(公告)号: US09954171B2公开(公告)日: 2018-04-24
- 发明人: Yu-Jung Peng , Hsin-Yu Hsieh , Yi-Kai Wang
- 申请人: Wistron Corporation
- 申请人地址: TW New Taipei
- 专利权人: Wistron Corporation
- 当前专利权人: Wistron Corporation
- 当前专利权人地址: TW New Taipei
- 代理机构: JCIPRNET
- 优先权: TW103112718A 20140407
- 主分类号: H01L51/00
- IPC分类号: H01L51/00 ; H01L51/05 ; H01L27/28
摘要:
A manufacturing method of an electronic device includes: providing a substrate; forming a source and a drain on the substrate; forming a semiconductor layer on the substrate; forming a first light sensitive material layer on the semiconductor layer; removing a first portion of the first light sensitive material layer by a first exposure and development process and maintaining a second portion of the first light sensitive material layer to serve as a first gate insulation layer; patterning the semiconductor layer to form a channel layer below the first gate insulation layer; forming a second light sensitive material layer on the substrate; removing a third portion of the second light sensitive material layer by a second exposure and development process to expose at least a part of the first gate insulation layer; and forming a first gate on the first gate insulation layer. An electronic device is also provided.
公开/授权文献
- US20150287924A1 ELECTRONIC DEVICE AND MANUFACTURING METHOD THEREOF 公开/授权日:2015-10-08
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