发明授权
- 专利标题: Process for fabricating semiconductor nanowires or microwires having insulated roots
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申请号: US15538148申请日: 2015-12-24
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公开(公告)号: US09954141B2公开(公告)日: 2018-04-24
- 发明人: Eric Pourquier , Philippe Gibert , Brigitte Martin
- 申请人: Aledia , Commissariat à l'Énergie Atomique et aux Énergies Alternatives
- 申请人地址: FR Grenoble FR Paris
- 专利权人: Aledia,Commissariat à l'Énergie Atomique et aux Énergies Alternatives
- 当前专利权人: Aledia,Commissariat à l'Énergie Atomique et aux Énergies Alternatives
- 当前专利权人地址: FR Grenoble FR Paris
- 代理机构: Wolf, Greenfield & Sacks, P.C.
- 优先权: FR1463372 20141229
- 国际申请: PCT/FR2015/053758 WO 20151224
- 国际公布: WO2016/108023 WO 20160707
- 主分类号: H01L33/34
- IPC分类号: H01L33/34 ; H01L33/24 ; H01L33/44 ; H01L33/06 ; H01L33/40 ; H01L33/08 ; H01L31/0224 ; H01L31/0216 ; H01L31/0352
摘要:
A process for fabricating an electronic device including a substrate and microwires or nanowires resting on the substrate, the process including successive steps of covering the wires with an insulating layer, covering the insulating layer with an opaque layer, depositing a first photoresist layer over the substrate between the wires, etching the first photoresist layer over a first thickness by photolithography, etching the first photoresist layer remaining after the preceding step over a second thickness by plasma etching, etching the portion of the opaque layer not covered by the first photoresist layer remaining after the preceding step, etching the portion of the insulating layer not covered by the opaque layer, removing the first photoresist layer remaining after the preceding step, and removing the opaque layer.
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