- 专利标题： Thyristor random access memory device and method
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申请号： US15284017申请日： 2016-10-03
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公开(公告)号： US09954075B2公开(公告)日： 2018-04-24
- 发明人: Sanh D. Tang , John K. Zahurak , Michael P. Violette
- 申请人： Micron Technology, Inc.
- 申请人地址： US ID Boise
- 专利权人： Micron Technology, Inc.
- 当前专利权人： Micron Technology, Inc.
- 当前专利权人地址： US ID Boise
- 代理机构： Schwegman Lundberg & Woessner, P.A.
- 主分类号： H01L21/332
- IPC分类号： H01L21/332 ; H01L29/66 ; H01L27/102 ; H01L29/423 ; H01L29/74
摘要：
Memory devices and methods of making memory devices are shown. Methods and configurations as shown provide folded and vertical memory devices for increased memory density. Methods provided reduce a need for manufacturing methods such as deep dopant implants.
公开/授权文献
- US20170025517A1 THYRISTOR RANDOM ACCESS MEMORY DEVICE AND METHOD 公开/授权日：2017-01-26
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