- 专利标题： Plasma induced flow electrode structure, plasma induced flow generation device, and method of manufacturing plasma induced flow electrode structure
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申请号： US15210115申请日： 2016-07-14
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公开(公告)号： US09934944B2公开(公告)日： 2018-04-03
- 发明人: Masato Akita , Akio Ui , Yasushi Sanada
- 申请人： KABUSHIKI KAISHA TOSHIBA
- 申请人地址： JP Tokyo
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JP Tokyo
- 代理机构： Finnegan, Henderson, Farabow, Garrett & Dunner, L.L.P.
- 优先权： JP2015-141202 20150715
- 主分类号： H01J37/32
- IPC分类号： H01J37/32 ; H01J9/18 ; A61L9/22 ; H05H1/24
摘要：
In one embodiment, a plasma induced flow electrode structure has an electrode block, an insulating layer and an electrode layer. The electrode block has first and second surfaces and through holes penetrating between these first and second surfaces. The insulating layer is disposed on the first surface and inside the through holes. The electrode layer is disposed on the insulating layer of the first surface.
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