- 专利标题: Pattern forming process and shrink agent
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申请号: US14991050申请日: 2016-01-08
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公开(公告)号: US09927708B2公开(公告)日: 2018-03-27
- 发明人: Jun Hatakeyama , Kazuhiro Katayama , Masayoshi Sagehashi
- 申请人: SHIN-ETSU CHEMICAL CO., LTD.
- 申请人地址: JP Tokyo
- 专利权人: SHIN-ETSU CHEMICAL CO., LTD.
- 当前专利权人: SHIN-ETSU CHEMICAL CO., LTD.
- 当前专利权人地址: JP Tokyo
- 代理机构: Westerman, Hattori, Daniels & Adrian, LLP
- 优先权: JP2015-003082 20150109
- 主分类号: G03F7/40
- IPC分类号: G03F7/40 ; C09D133/10 ; C09D137/00 ; C09D135/02 ; C09D125/18 ; C08F12/20 ; C08F12/24 ; C08F212/14
摘要:
A negative pattern is formed by applying a resist composition onto a substrate, exposing the resist film, and developing the exposed resist film in an organic solvent developer. The process further involves coating the negative pattern with a shrink agent solution of a first polymer comprising recurring units capable of forming carboxyl, hydroxyl or lactone ring and a second polymer comprising recurring units capable of forming amino and fluorinated recurring units in an ester and/or ketone solvent, baking the coating, and removing the excessive shrink agent for thereby shrinking the size of spaces in the pattern.
公开/授权文献
- US20160202612A1 PATTERN FORMING PROCESS AND SHRINK AGENT 公开/授权日:2016-07-14
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