- 专利标题: High loop-gain pHEMT regulator for linear RF power amplifier
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申请号: US15600866申请日: 2017-05-22
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公开(公告)号: US09912296B1公开(公告)日: 2018-03-06
- 发明人: Peng Cheng , Swaminathan Muthukrishnan , David Antopolsky , Jeremiah J. Smith , Nancy Schaefer , Randy Naylor
- 申请人: Qorvo US, Inc.
- 申请人地址: US NC Greensboro
- 专利权人: Qorvo US, Inc.
- 当前专利权人: Qorvo US, Inc.
- 当前专利权人地址: US NC Greensboro
- 代理机构: Withrow & Terranova, P.L.L.C.
- 主分类号: H04B1/16
- IPC分类号: H04B1/16 ; H03F1/02 ; H03F3/195 ; H03F3/24 ; H03F3/72 ; H03G3/00 ; H03G3/30
摘要:
Voltage regulator circuitry includes a first gain stage, a second gain stage, and a feedback stage. Feedback is provided between the feedback stage, the second gain stage, and the first gain stage in order to tightly regulate an output voltage of the voltage regulator circuitry such that the output voltage is independent of process variations present in the devices therein. The voltage regulator circuitry is fabricated using a pseudomorphic high electron mobility transistor (pHEMT) process in order to reduce the size thereof and provide short turn-on times and low quiescent current.
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