- 专利标题： Solid-state imaging element, method for manufacturing solid-state imaging element, and electronic device
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申请号： US14277391申请日： 2014-05-14
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公开(公告)号： US09911870B2公开(公告)日： 2018-03-06
- 发明人: Naoyuki Sato
- 申请人： Sony Corporation
- 申请人地址： JP Tokyo
- 专利权人： Sony Corporation
- 当前专利权人： Sony Corporation
- 当前专利权人地址： JP Tokyo
- 代理机构： Michael Best & Friedrich LLP
- 优先权： JP2011-012818 20110125
- 主分类号： H01L27/146
- IPC分类号： H01L27/146 ; H01L31/02
摘要：
A solid-state imaging element including: a sensor substrate in which a photoelectric conversion section is arranged and formed; a circuit substrate in which a circuit for driving the photoelectric conversion section is formed, the circuit substrate being laminated to the sensor substrate; a sensor side electrode drawn out to a surface of the sensor substrate on a side of the circuit substrate and formed as one of a projection electrode and a depression electrode; and a circuit side electrode drawn out to a surface of the circuit substrate on a side of the sensor substrate, formed as one of the depression electrode and the projection electrode, and joined to the sensor side electrode in a state of the circuit side electrode and the sensor side electrode being fitted together.
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