A method for manufacturing an array substrate, comprising forming a pattern of a gate electrode by one pattering process; forming a gate insulating layer on a substrate provided with the pattern of the gate electrode; forming first and second patterns thereon, in which the first pattern corresponds to a pattern of a semiconductor active layer and the second pattern corresponds to a source electrode and a drain electrode; forming a pattern layer including an opening area on the substrate provided with the second pattern, in which the opening area corresponds to a gap between the source electrode and the drain electrode, the minimum width thereof being greater than the width of the gap between the source electrode and the drain electrode, and at least forming a pattern of the source electrode and the drain electrode and a pixel electrode electrically connected with the drain electrode through the opening area.