Invention Grant
- Patent Title: Method for producing an oxide film using a low temperature process, an oxide film and an electronic device thereof
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Application No.: US14394869Application Date: 2012-11-30
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Publication No.: US09881791B2Publication Date: 2018-01-30
- Inventor: Yong Hoon Kim , Sung Kyu Park , Min Suk Oh , Ji Wan Kim
- Applicant: KOREA ELECTRONICS TECHNOLOGY INSTITUTE , CHUNG-ANG UNIVERSITY INDUSTRY-ACADEMY COOPERATION FOUNDATION
- Applicant Address: KR Seongnam-si, Gyeonggi-do KR Seoul
- Assignee: KOREA ELECTRONICS TECHNOLOGY INSTITUTE,CHUNG-ANG UNIVERSITY INDUSTRY-ACADEMY COOPERATION FOUNDATION
- Current Assignee: KOREA ELECTRONICS TECHNOLOGY INSTITUTE,CHUNG-ANG UNIVERSITY INDUSTRY-ACADEMY COOPERATION FOUNDATION
- Current Assignee Address: KR Seongnam-si, Gyeonggi-do KR Seoul
- Agency: Hauptman Ham, LLP
- Priority: KR10-2012-0039035 20120416; KR10-2012-0137532 20121130
- International Application: PCT/KR2012/010275 WO 20121130
- International Announcement: WO2013/157715 WO 20131024
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L21/26 ; H01L29/24 ; H01L29/786
Abstract:
Disclosed are a method for producing an oxide film using a low temperature process, an oxide film and an electronic device. The method for producing an oxide film according to an embodiment of the present invention includes the steps of coating a substrate with an oxide solution, and irradiating the oxide solution coat with ultraviolet rays under an inert gas atmosphere.
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