- 专利标题： Transistor with hole barrier layer
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申请号： US14700712申请日： 2015-04-30
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公开(公告)号： US09876082B2公开(公告)日： 2018-01-23
- 发明人: Allen W. Hanson , Gabriel R. Cueva , Wayne M. Struble , Yan Zhang
- 申请人： MACOM Technology Solutions Holdings, Inc.
- 申请人地址： US MA Lowell
- 专利权人： MACOM Technology Solutions Holdings, Inc.
- 当前专利权人： MACOM Technology Solutions Holdings, Inc.
- 当前专利权人地址： US MA Lowell
- 代理机构： Christopher P. Maiorana, PC
- 主分类号： H01L29/205
- IPC分类号： H01L29/205 ; H01L29/66 ; H01L29/43 ; H01L29/778
摘要：
An apparatus includes a channel layer, a first layer, a hole barrier layer and a second layer. The channel layer may be configured to carry a drain current in response to a voltage at a gate node. The first layer may be between the channel layer and the gate node. The first layer generally has a first bandgap. The hole barrier layer may be in contact with the first layer. The hole barrier layer generally has a second bandgap that (i) forms a valence band offset relative to the first bandgap and (ii) is configured to impede holes generated in one or more of the channel layer and the first layer from reaching the gate node. The gate node may be in contact with the second layer. The apparatus generally forms a field effect transistor.
公开/授权文献
- US20160322457A1 TRANSISTOR WITH HOLE BARRIER LAYER 公开/授权日：2016-11-03
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