- 专利标题: Heat treatment method for heating substrate by irradiating substrate with flash of light
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申请号: US15413786申请日: 2017-01-24
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公开(公告)号: US09875919B2公开(公告)日: 2018-01-23
- 发明人: Hiroki Kiyama
- 申请人: SCREEN Holdings Co., Ltd.
- 申请人地址: JP Kyoto
- 专利权人: SCREEN Holdings, Co. Ltd.
- 当前专利权人: SCREEN Holdings, Co. Ltd.
- 当前专利权人地址: JP Kyoto
- 代理机构: Ostrolenk Faber LLP
- 优先权: JP2013-010836 20130124
- 主分类号: F26B3/30
- IPC分类号: F26B3/30 ; H01L21/67 ; H01L21/324 ; H01L21/66
摘要:
A flash heating part in a heat treatment apparatus includes 30 built-in flash lamps, and irradiates a semiconductor wafer held by a holder in a chamber with a flash of light. Thirty switching elements are provided in a one-to-one correspondence with the 30 flash lamps. Each of the switching elements defines the waveform of current flowing through a corresponding one of the flash lamps by intermittently supplying electrical charge thereto. Radiation thermometers measure an in-plane temperature distribution of the semiconductor wafer during flash irradiation. Based on the results of measurement with the radiation thermometers, a controller individually controls the operations of the 30 switching elements to individually define the light emission patterns of the 30 flash lamps.
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