发明授权
- 专利标题: Multi-stage programming at a storage device using multiple instructions from a host
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申请号: US15404487申请日: 2017-01-12
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公开(公告)号: US09870174B2公开(公告)日: 2018-01-16
- 发明人: Amir Shaharabany , Hadas Oshinsky
- 申请人: SANDISK TECHNOLOGIES LLC
- 申请人地址: US TX Plano
- 专利权人: SanDisk Technologies LLC
- 当前专利权人: SanDisk Technologies LLC
- 当前专利权人地址: US TX Plano
- 代理机构: Toler Law Group, PC
- 主分类号: G06F3/06
- IPC分类号: G06F3/06 ; G11C11/56
摘要:
An apparatus includes a memory storing a group of pages of data. An interface of the apparatus is configured to send, to a data storage device (DSD) from a first command queue, a first instruction of instructions to store the group of pages to the DSD using a logical address corresponding to the group of pages. The interface is further configured to send, to the DSD from a second command queue, a second instruction of the instructions to write the group of pages to the DSD using the logical address. Sending a first copy of the group of pages in association with the first instruction and sending a second copy of the group of pages in association with the second instruction enables a multi-stage programming operation to be performed at the DSD without storing the group of pages at the DSD between stages of the multi-stage programming operation.
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