Invention Grant
- Patent Title: Semiconductor device contact structure having stacked nickel, copper, and tin layers
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Application No.: US15191723Application Date: 2016-06-24
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Publication No.: US09853006B2Publication Date: 2017-12-26
- Inventor: Charles L. Arvin , Harry D. Cox , Eric D. Perfecto , Thomas A. Wassick
- Applicant: GLOBALFOUNDRIES INC.
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES INC.
- Current Assignee: GLOBALFOUNDRIES INC.
- Current Assignee Address: KY Grand Cayman
- Agency: Roberts Mlotkowski Safran Cole & Calderon, P.C.
- Agent Anthony Canale; Andrew M. Calderon
- Main IPC: H01L23/00
- IPC: H01L23/00 ; H01L23/532 ; H01L25/00 ; H01L25/065 ; H01L21/768 ; H01L21/683

Abstract:
A three dimensional multi-die package includes a first die and second die. The first die includes a contact attached to solder. The second die is thinned by adhesively attaching a handler to a top side of the second die and thinning a bottom side of the second die. The second die includes a multilayer contact of layered metallurgy that inhibits transfer of adhesive thereto. The layered metallurgy includes at least one layer that is wettable to the solder. The multilayer contact may include a Nickel layer, a Copper layer upon the Nickel layer, and a Nickel-Iron layer upon the Copper layer. The multilayer contact may also include a Nickel layer, a Copper-Tin layer upon the Nickel layer, and a Tin layer upon the Copper-Tin layer.
Public/Granted literature
- US20160307860A1 LAYERED CONTACT STRUCTURE Public/Granted day:2016-10-20
Information query
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