- 专利标题： Heterostructure including a composite semiconductor layer
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申请号： US14519230申请日： 2014-10-21
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公开(公告)号： US09818826B2公开(公告)日： 2017-11-14
- 发明人: Maxim S. Shatalov , Rakesh Jain , Jinwei Yang , Alexander Dobrinsky , Michael Shur , Remigijus Gaska
- 申请人： Sensor Electronic Technology, Inc.
- 申请人地址： US SC Columbia
- 专利权人： Sensor Electronic Technology, Inc.
- 当前专利权人： Sensor Electronic Technology, Inc.
- 当前专利权人地址： US SC Columbia
- 代理机构： LaBatt, LLC
- 主分类号： H01L29/15
- IPC分类号： H01L29/15 ; H01L33/00 ; H01L33/12 ; H01L29/20 ; H01L29/205 ; H01L29/06 ; H01L21/02
摘要：
A heterostructure for use in an electronic or optoelectronic device is provided. The heterostructure includes one or more composite semiconductor layers. The composite semiconductor layer can include sub-layers of varying morphology, at least one of which can be formed by a group of columnar structures (e.g., nanowires). Another sub-layer in the composite semiconductor layer can be porous, continuous, or partially continuous.
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