- 专利标题： Methods of forming one or more covered voids in a semiconductor substrate
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申请号： US14712219申请日： 2015-05-14
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公开(公告)号： US09786548B2公开(公告)日： 2017-10-10
- 发明人: David H. Wells
- 申请人： Micron Technology, Inc.
- 申请人地址： US ID Boise
- 专利权人： Micron Technology, Inc.
- 当前专利权人： Micron Technology, Inc.
- 当前专利权人地址： US ID Boise
- 代理机构： Wells St. John, P.S.
- 主分类号： H01L21/336
- IPC分类号： H01L21/336 ; H01L21/764 ; H01L21/20 ; H01L21/02
摘要：
Some embodiments include methods of forming voids within semiconductor constructions. In some embodiments the voids may be utilized as microstructures for distributing coolant, for guiding electromagnetic radiation, or for separation and/or characterization of materials. Some embodiments include constructions having micro-structures therein which correspond to voids, conduits, insulative structures, semiconductor structures or conductive structures.
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