A method for manufacturing an integrated circuit (IC) is provided. An etch is performed into an upper surface of an insulating layer to form an opening. A plurality of electrode layers is formed filling the opening. Forming the plurality of electrode layers comprises repeatedly forming an electrode layer conformally lining an unfilled region of the opening until the opening is filled. Forming the electrode layer comprises depositing the electrode layer and treating a surface of the electrode layer that faces an interior of the opening. A planarization is performed into the plurality of electrode layers to the upper surface of the insulating layer.