- 专利标题: Methods for overdriving a base current of an emitter switched bipolar junction transistor and corresponding circuits
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申请号: US15394290申请日: 2016-12-29
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公开(公告)号: US09748948B2公开(公告)日: 2017-08-29
- 发明人: Vijay Gangadhar Phadke
- 申请人: Astec International Limited
- 申请人地址: HK Kwun Tong, Kowloon
- 专利权人: ASTEC INTERNATIONAL LIMITED
- 当前专利权人: ASTEC INTERNATIONAL LIMITED
- 当前专利权人地址: HK Kwun Tong, Kowloon
- 代理机构: Harness, Dickey & Pierce, P.L.C.
- 主分类号: H03K17/60
- IPC分类号: H03K17/60
摘要:
An emitter switched bipolar transistor circuit includes a bipolar junction transistor (BJT) having a collector coupled to an output terminal, a metal oxide semiconductor field effect transistor (MOSFET) coupled to an emitter of the BJT, a bias voltage supply coupled to the base of the BJT, a buffer coupled to the base of the BJT, and a comparator. The comparator includes a first input coupled to the collector of the BJT, a second input coupled to a voltage reference, and an output coupled to an input of the buffer. The comparator is configured to receive a collector voltage of the BJT at the first input of the comparator, compare the received collector voltage with the voltage reference, and cause the buffer to inject a current pulse to the base of the BJT until the collector voltage is less than the voltage reference, indicating the BJT is substantially saturated.
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