Invention Grant
- Patent Title: Light emitting structure and a manufacturing method thereof
-
Application No.: US15285678Application Date: 2016-10-05
-
Publication No.: US09748456B2Publication Date: 2017-08-29
- Inventor: Chia-Liang Hsu
- Applicant: EPISTAR CORPORATION
- Applicant Address: TW Hsinchu
- Assignee: EPISTAR CORPORATION
- Current Assignee: EPISTAR CORPORATION
- Current Assignee Address: TW Hsinchu
- Agency: Dittavong & Steiner, P.C.
- Priority: TW99130428A 20100908
- Main IPC: H01L33/38
- IPC: H01L33/38 ; H01L33/58 ; H01L33/60 ; H01L33/48 ; H01L33/54 ; H01L33/62 ; H01L33/50 ; H01L33/00

Abstract:
A light-emitting structure comprises a semiconductor light-emitting element which includes a first connection point and a second connection point. The light-emitting structure further includes a first electrode electrically connected to the first connection point, and a second electrode electrically connected the second connection point. The first electrode and the second electrode can form a concave on which the semiconductor light-emitting element is located.
Public/Granted literature
- US20170025592A1 LIGHT EMITTING STRUCTURE AND A MANUFACTURING METHOD THEREOF Public/Granted day:2017-01-26
Information query
IPC分类: