- 专利标题： Semiconductor element, semiconductor device including the same, and method for manufacturing semiconductor element
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申请号： US15146565申请日： 2016-05-04
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公开(公告)号： US09748455B2公开(公告)日： 2017-08-29
- 发明人: Shuji Shioji , Masafumi Kuramoto
- 申请人： Nichia Corporation
- 申请人地址： JP Anan-Shi
- 专利权人： NICHIA CORPORATION
- 当前专利权人： NICHIA CORPORATION
- 当前专利权人地址： JP Anan-Shi
- 代理机构： Foley & Lardner LLP
- 优先权： JP2013-266437 20131225; JP2014-233970 20141118
- 主分类号： H01L33/60
- IPC分类号： H01L33/60 ; H01L23/15 ; H01L29/41 ; H01L33/46
摘要：
To provide a semiconductor element that can have the high adhesion between a substrate made of an oxide or the like and a metal film, a semiconductor element includes a substrate made of an oxide, a semiconductor element structure provided on an upper surface of the substrate, and a metal film provided on a lower surface of the substrate, in which the metal film contains nanoparticles made of an oxide.
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