Invention Grant
- Patent Title: System and method for generating cascode current source bias voltage
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Application No.: US14548187Application Date: 2014-11-19
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Publication No.: US09746869B2Publication Date: 2017-08-29
- Inventor: Nasrin Jaffari
- Applicant: SAMSUNG DISPLAY CO., LTD.
- Applicant Address: KR Yongin-si
- Assignee: Samsung Display Co., Ltd.
- Current Assignee: Samsung Display Co., Ltd.
- Current Assignee Address: KR Yongin-si
- Agency: Lewis Roca Rothgerber Christie LLP
- Main IPC: G05F3/26
- IPC: G05F3/26 ; G05F3/20 ; G05F3/24

Abstract:
A circuit includes: a cascode current source comprising: a current mirror transistor; and a cascode transistor; and a bias circuit coupled to the cascode current source, the bias circuit comprising: a current source; a first transistor coupled in series to the current source to form a first current path through the current source and the first transistor; a second transistor coupled in series to the current source; and a third transistor coupled in series to the second transistor and the current source to form a second current path through the current source and the second and third transistors, wherein the third transistor has a channel size greater than a channel size of the second transistor by a multiple determined according to a design factor of the bias circuit.
Public/Granted literature
- US20150160679A1 SYSTEM AND METHOD FOR GENERATING CASCODE CURRENT SOURCE BIAS VOLTAGE Public/Granted day:2015-06-11
Information query
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