- 专利标题: Thin film transistor array and manufacturing method of the same
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申请号: US15082078申请日: 2016-03-28
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公开(公告)号: US09735381B2公开(公告)日: 2017-08-15
- 发明人: Ryohei Matsubara
- 申请人: TOPPAN PRINTING CO., LTD.
- 申请人地址: JP Taito-ku
- 专利权人: TOPPAN PRINTING CO., LTD.
- 当前专利权人: TOPPAN PRINTING CO., LTD.
- 当前专利权人地址: JP Taito-ku
- 代理机构: Oblon, McClelland, Maier & Neustadt, L.L.P.
- 优先权: JP2013-202152 20130927
- 主分类号: H01L51/05
- IPC分类号: H01L51/05 ; H01L27/12 ; G02F1/1362 ; H01L51/10 ; H01L27/32
摘要:
A thin film transistor array includes thin film transistors positioned in a matrix, each of the thin film transistors including a substrate, a gate electrode formed on the substrate, a gate insulation layer formed on the gate electrode, a source electrode formed on the gate insulation layer, a drain electrode formed on the gate insulation layer, a pixel electrode formed on the gate insulation layer and connected to the source electrode and the drain electrode, a semiconductor layer formed between the source electrode and the drain electrode, an interlayer insulation film covering the source electrode, the drain electrode, the semiconductor layer and a portion of the pixel electrode, and an upper pixel electrode formed on the interlayer insulation film and connected to the pixel electrode. The interlayer insulation film has one or more concave portions and one or more via hole portions.
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