发明授权
- 专利标题： Method for manufacturing a semiconductor device having an oxide semiconductor layer
-
申请号： US14996409申请日： 2016-01-15
-
公开(公告)号： US09721811B2公开(公告)日： 2017-08-01
- 发明人: Shunpei Yamazaki , Junichiro Sakata , Hiroki Ohara
- 申请人： Semiconductor Energy Laboratory Co., Ltd.
- 申请人地址： JP Kanagawa-ken
- 专利权人： Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人： Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人地址： JP Kanagawa-ken
- 代理机构： Robinson Intellectual Property Law Office
- 代理商 Eric J. Robinson
- 优先权： JP2009-277078 20091204
- 主分类号： H01L21/324
- IPC分类号： H01L21/324 ; H01L21/465 ; H01L21/28 ; H01L29/04 ; H01L29/66 ; H01L29/786 ; H01L21/02 ; H01L21/477
摘要：
A semiconductor device for high power application in which a novel semiconductor material having high mass productivity is provided. An oxide semiconductor film is formed, and then, first heat treatment is performed on the exposed oxide semiconductor film in order to reduce impurities such as moisture or hydrogen in the oxide semiconductor film. Next, in order to further reduce impurities such as moisture or hydrogen in the oxide semiconductor film, oxygen is added to the oxide semiconductor film by an ion implantation method, an ion doping method, or the like, and after that, second heat treatment is performed on the exposed oxide semiconductor film.
公开/授权文献
- US20160204231A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 公开/授权日：2016-07-14
信息查询
IPC分类:
