- 专利标题: Pattern placement error compensation layer
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申请号: US14939251申请日: 2015-11-12
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公开(公告)号: US09704807B2公开(公告)日: 2017-07-11
- 发明人: Deniz E. Civay , Erik R. Hosler
- 申请人: GLOBALFOUNDRIES Inc.
- 申请人地址: KY Grand Cayman
- 专利权人: GLOBALFOUNDRIES Inc.
- 当前专利权人: GLOBALFOUNDRIES Inc.
- 当前专利权人地址: KY Grand Cayman
- 代理机构: Amerson Law Firm, PLLC
- 主分类号: H01L23/535
- IPC分类号: H01L23/535 ; H01L21/768 ; H01L23/532
摘要:
A method includes forming a first conductive feature positioned in a first dielectric layer. A conductive polymer layer is formed above the first dielectric layer and the first conductive feature. The conductive polymer layer has a conductive path length. A second dielectric layer is formed above the first dielectric layer. A first via opening is formed in the second dielectric layer and the conductive polymer layer to expose the first conductive feature. A conductive via is formed in the first via opening. The conductive via contacts the first conductive feature and the conductive polymer layer.
公开/授权文献
- US20170141035A1 PATTERN PLACEMENT ERROR COMPENSATION LAYER 公开/授权日:2017-05-18
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