Invention Grant
- Patent Title: Electronic switching device with reduction of leakage currents and corresponding control method
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Application No.: US14536122Application Date: 2014-11-07
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Publication No.: US09654095B2Publication Date: 2017-05-16
- Inventor: Bruno Gailhard , Michel Cuenca
- Applicant: STMicroelectronics (Rousset) SAS
- Applicant Address: FR Rousset
- Assignee: STMicroelectronics (Rousset) SAS
- Current Assignee: STMicroelectronics (Rousset) SAS
- Current Assignee Address: FR Rousset
- Agency: Slater Matsil, LLP
- Priority: FR1361560 20131125
- Main IPC: H03K17/16
- IPC: H03K17/16 ; H03K17/687 ; H03K3/012 ; G11C27/02

Abstract:
A method is used to control an electronic device that includes a switching unit having a main MOS transistor having a substrate, a first conducting electrode and a second conducting electrode coupled to an output terminal. The method includes controlling the main transistor in such a way as to put it into an on state or an off state such that, when the main transistor is in the on state, the substrate and the first conducting electrode of the main transistor are connected to an input terminal and, when the main transistor is in the off state, the first conducting electrode of the main transistor is isolated from the input terminal and a first bias voltage is applied to the first conducting electrode and a second bias voltage is applied to the substrate of the main transistor.
Public/Granted literature
- US20150145564A1 Electronic Switching Device with Reduction of Leakage Currents and Corresponding Control Method Public/Granted day:2015-05-28
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