发明授权
- 专利标题： Semiconductor device, power circuit, and manufacturing method of semiconductor device
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申请号： US14873249申请日： 2015-10-02
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公开(公告)号： US09647131B2公开(公告)日： 2017-05-09
- 发明人: Shunpei Yamazaki , Kei Takahashi , Yoshiaki Ito
- 申请人： Semiconductor Energy Laboratory Co., Ltd.
- 申请人地址： JP Atsugi-shi, Kanagawa-ken
- 专利权人： Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人： Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人地址： JP Atsugi-shi, Kanagawa-ken
- 代理机构： Fish & Richardson P.C.
- 优先权： JP2009-218816 20090924
- 主分类号： H01L29/786
- IPC分类号： H01L29/786 ; H01L29/66 ; H01L29/04 ; H01L29/24 ; H01L29/417 ; H01L29/423 ; H01L21/02
摘要：
The semiconductor device includes a first conductive layer over a substrate; an oxide semiconductor layer which covers the first conductive layer; a second conductive layer in a region which is not overlapped with the first conductive layer over the oxide semiconductor layer; an insulating layer which covers the oxide semiconductor layer and the second conductive layer; and a third conductive layer in a region including at least a region which is not overlapped with the first conductive layer or the second conductive layer over the insulating layer.
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