- 专利标题: Operating method of memory system
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申请号: US14712656申请日: 2015-05-14
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公开(公告)号: US09620246B2公开(公告)日: 2017-04-11
- 发明人: Hyung-Min Lee
- 申请人: SK hynix Inc.
- 申请人地址: KR Gyeonggi-do
- 专利权人: SK Hynix Inc.
- 当前专利权人: SK Hynix Inc.
- 当前专利权人地址: KR Gyeonggi-do
- 代理机构: IP & T Group LLP
- 优先权: KR10-2014-0183456 20141218
- 主分类号: G11C29/00
- IPC分类号: G11C29/00 ; G11C29/52 ; G11C29/02 ; G06F11/10
摘要:
Second data is generated by re-reading first data using a second read voltage when a first ECC decoding to first data using a first read voltage fails. Third data is generated by performing a second ECC decoding to the second data. An error-bit-number, which is a number of bits different between the second data and the third data, is obtained when the second ECC decoding fails. The process is repeated by changing the second read voltage until the error-bit-number is smaller than a predetermined threshold value. A third ECC decoding is performed to an optimal data that is the second data read using the second read voltage, with which the error-bit-number is smaller than the predetermined threshold value.
公开/授权文献
- US20160179615A1 OPERATING METHOD OF MEMORY SYSTEM 公开/授权日:2016-06-23
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