Invention Grant
- Patent Title: Wafer to wafer bonding process and structures
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Application No.: US14712729Application Date: 2015-05-14
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Publication No.: US09613926B2Publication Date: 2017-04-04
- Inventor: Chen-Hua Yu , Ming-Fa Chen , Wen-Ching Tsai
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater Matsil, LLP
- Main IPC: H01L23/00
- IPC: H01L23/00 ; B81C3/00 ; H01L23/10 ; H01L21/50

Abstract:
Bonded structures and method of forming the same are provided. A conductive layer is formed on a first surface of a bonded structure, the bonded structure including a first substrate bonded to a second substrate, the first surface of the bonded structure being an exposed surface of the first substrate. A patterned mask having first openings and second openings is formed on the conductive layer, the first openings and the second openings exposing portions of the conductive layer. First portions of first bonding connectors are formed in the first openings and first portions of second bonding connectors are formed in the second openings. The conductive layer is patterned to form second portions of the first bonding connectors and second portions of the second bonding connectors. The bonded structure is bonded to a third substrate using the first bonding connectors and the second bonding connectors.
Public/Granted literature
- US20160190089A1 Wafer to Wafer Bonding Process and Structures Public/Granted day:2016-06-30
Information query
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