发明授权
- 专利标题: Simulated NVRAM
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申请号: US13291239申请日: 2011-11-08
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公开(公告)号: US09606929B2公开(公告)日: 2017-03-28
- 发明人: Susan W. Brosnan , Patricia S. Hogan , John David Landers, Jr. , David J. Steiner
- 申请人: Susan W. Brosnan , Patricia S. Hogan , John David Landers, Jr. , David J. Steiner
- 申请人地址: SG Singapore
- 专利权人: Lenovo Enterprise Solutions (Singapore) Pte. Ltd.
- 当前专利权人: Lenovo Enterprise Solutions (Singapore) Pte. Ltd.
- 当前专利权人地址: SG Singapore
- 代理机构: Lieberman & Brandsdorfer, LLC
- 主分类号: G06F12/00
- IPC分类号: G06F12/00 ; G06F13/00 ; G06F13/28 ; G06F12/0871 ; G06F12/0868 ; G06F12/0804
摘要:
Embodiments of the invention relate to leveraging disk controller cache memory to simulate non-volatile random access memory. At least one logical block address in cache memory of the disk controller is designated and set aside as permanently dirty. Read operations may be supported with data in the cache memory; including data retained in any block address designated as permanently dirty. Write operations may also be supported by storing the write data in the logical block address designated as permanently dirty.
公开/授权文献
- US20130117498A1 SIMULATED NVRAM 公开/授权日:2013-05-09
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