发明授权
US09595597B1 Semiconductor device including dual spacer and uniform epitaxial buffer interface of embedded SiGe source/drain
有权
半导体器件包括嵌入式SiGe源极/漏极的双间隔物和均匀的外延缓冲层界面
- 专利标题： Semiconductor device including dual spacer and uniform epitaxial buffer interface of embedded SiGe source/drain
- 专利标题（中）： 半导体器件包括嵌入式SiGe源极/漏极的双间隔物和均匀的外延缓冲层界面
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申请号： US14951660申请日： 2015-11-25
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公开(公告)号： US09595597B1公开(公告)日： 2017-03-14
- 发明人: Veeraraghavan S. Basker , Zuoguang Liu , Tenko Yamashita , Chun-Chen Yeh
- 申请人： International Business Machines Corporation
- 申请人地址： US NY Armonk
- 专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址： US NY Armonk
- 代理机构： Cantor Colburn LLP
- 代理商 Vazken Alexanian
- 主分类号： H01L21/8234
- IPC分类号： H01L21/8234 ; H01L29/66 ; H01L21/3065 ; H01L21/02
摘要：
A semiconductor device includes at least one semiconductor fin on an upper surface of a semiconductor substrate. The semiconductor fin includes a channel region formed of a first semiconductor material interposed between opposing embedded source/drain regions formed of a second semiconductor material different from the first semiconductor material. At least one gate stack is formed on the upper surface of the semiconductor substrate and wraps around the channel region. The embedded source/drain regions have a symmetrical shape and a uniform embedded interface.
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