发明授权
US09590739B2 High electron mobility transistor-based terahertz wave space external modulator
有权
基于高电子迁移率晶体管的太赫兹波空间外调制器
- 专利标题： High electron mobility transistor-based terahertz wave space external modulator
- 专利标题（中）： 基于高电子迁移率晶体管的太赫兹波空间外调制器
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申请号： US14892578申请日： 2014-05-20
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公开(公告)号： US09590739B2公开(公告)日： 2017-03-07
- 发明人: Yaxin Zhang , Shen Qiao , Shixiong Liang , Ziqiang Yang , Zhihong Feng
- 申请人： UNIVERSITY OF ELECTRONIC SCIENCE AND TECHNOLOGY OF CHINA
- 申请人地址： CN Chengdu
- 专利权人： UNIVERSITY OF ELECTRONIC SCIENCE AND TECHNOLOGY OF CHINA
- 当前专利权人： UNIVERSITY OF ELECTRONIC SCIENCE AND TECHNOLOGY OF CHINA
- 当前专利权人地址： CN Chengdu
- 代理商 Gokalp Bayramoglu
- 优先权： CN201310187521 20130520; CN201310198600 20130524
- 国际申请： PCT/CN2014/000512 WO 20140520
- 国际公布： WO2014/187150 WO 20141127
- 主分类号： H01L29/66
- IPC分类号： H01L29/66 ; H04B10/516 ; H04B10/90 ; H04B10/50
摘要：
Terahertz external modulator based on high electron mobility transistors belongs to the field of electromagnetic functional devices technology. This invention includes the semiconductor substrate (1), the epitaxial layer (2), and the modulation-unit array (4). The epitaxial layer (2) is set on the semiconductor substrate (1). The modulation-unit (4), the positive electrode (3), and the negative electrode (5) are all set on the epitaxial layer (2). The modulation-unit array includes at least three units with each of them is composed of high electron mobility transistors and metamaterial-structure. The gates of transistors connect to the negative electrode (5), and the sources and drains connect to the positive electrode (3). This invention is used for manipulation of spatial transmission terahertz waves. It could be operated at room temperatures, normal pressures, and non-vacuum condition. It does not need to load on the waveguide, thus is easy to package and use.
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