Hardmask composition and method of forming pattern by using the hardmask composition

Invention Grant

US09583358B2 Hardmask composition and method of forming pattern by using the hardmask composition 有权

Title translation: 硬掩模组合物和使用硬掩模组合物形成图案的方法

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Patent Title: Hardmask composition and method of forming pattern by using the hardmask composition
Patent Title (中): 硬掩模组合物和使用硬掩模组合物形成图案的方法
Application No.: US14725390

Application Date: 2015-05-29
Publication No.: US09583358B2

Publication Date: 2017-02-28
Inventor: Sangwon Kim , Hyeonjin Shin , Seongjun Park
Applicant: Samsung Electronics Co., Ltd.
Applicant Address: KR Gyeonggi-do
Assignee: Samsung Electronics Co., Ltd.
Current Assignee: Samsung Electronics Co., Ltd.
Current Assignee Address: KR Gyeonggi-do
Agency: Harness, Dickey & Pierce, P.L.C.
Priority: KR10-2014-0066524 20140530; KR10-2014-0114530 20140829
Main IPC: H01L21/308
IPC: H01L21/308 ; H01L21/324 ; H01L21/02 ; H01L21/311 ; H01L21/3213

Hardmask composition and method of forming pattern by using the hardmask composition

Abstract:

A hardmask composition may include a solvent and a 2-dimensional carbon nanostructure containing about 0.01 atom % to about 40 atom % of oxygen or a 2-dimensional carbon nanostructure precursor thereof. A content of oxygen in the 2-dimensional carbon nanostructure precursor may be lower than about 0.01 atom % or greater than about 40 atom %. The hardmask composition may be used to form a fine pattern.

Abstract(Chinese):

硬掩模组合物可以包括溶剂和包含约0.01原子％至约40原子％的氧的二维碳纳米结构或其二维碳纳米结构前体。二维碳纳米结构前体中的氧含量可以低于约0.01原子％或大于约40原子％。硬掩模组合物可用于形成精细图案。

Public/Granted literature

US20150348794A1 HARDMASK COMPOSITION AND METHOD OF FORMING PATTERN BY USING THE HARDMASK COMPOSITION Public/Granted day:2015-12-03

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/18	...器件有由周期表Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体，如掺杂材料
H01L21/30	....用H01L21/20至H01L21/26各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/28）
H01L21/302	.....改变半导体材料的表面物理特性或形状的，例如腐蚀、抛光、切割
H01L21/306	......化学或电处理，例如电解腐蚀（形成绝缘层的入H01L21/31；绝缘层的后处理入H01L21/3105）
H01L21/308	.......应用掩膜的（H01L21/3063，H01L21/3065优先）