Invention Grant
- Patent Title: Inductor structure in a semiconductor device
- Patent Title (中): 半导体器件中的电感结构
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Application No.: US14746652Application Date: 2015-06-22
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Publication No.: US09576718B2Publication Date: 2017-02-21
- Inventor: Uei-Ming Jow , Young Kyu Song , Jong-Hoon Lee , Jung Ho Yoon , Sangjo Choi , Xiaonan Zhang
- Applicant: QUALCOMM Incorporated
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM Incorporated
- Current Assignee: QUALCOMM Incorporated
- Current Assignee Address: US CA San Diego
- Agency: Toler Law Group, PC
- Main IPC: H01F27/28
- IPC: H01F27/28 ; H01F5/00 ; H01F41/04

Abstract:
An inductor structure includes a first set of traces corresponding to a first layer of an inductor, a second set of traces corresponding to a second layer of the inductor, and a third set of traces corresponding to a third layer of the inductor that is positioned between the first layer and the second layer. The first set of traces includes a first trace and a second trace that is parallel to the first trace. A dimension of the first trace is different from a corresponding dimension of the second trace. The second set of traces is coupled to the first set of traces. The second set of traces includes a third trace that is coupled to the first trace and to the second trace. The third set of traces is coupled to the first set of traces.
Public/Granted literature
- US20160372253A1 INDUCTOR STRUCTURE IN A SEMICONDUCTOR DEVICE Public/Granted day:2016-12-22
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