发明授权
- 专利标题： Semiconductor device and manufacturing method thereof
- 专利标题（中）： 半导体装置及其制造方法
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申请号： US14828946申请日： 2015-08-18
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公开(公告)号： US09564345B1公开(公告)日： 2017-02-07
- 发明人: Tien-Chung Yang , Lin-Chih Huang , Hsien-Wei Chen , An-Jhih Su , Li-Hsien Huang
- 申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- 申请人地址： TW Hsinchu
- 专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- 当前专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- 当前专利权人地址： TW Hsinchu
- 代理机构： WPAT, P.C., Intellectual Property Attorneys
- 代理商 Anthony King
- 主分类号： H01L29/06
- IPC分类号： H01L29/06 ; H01L21/48 ; H01L21/78 ; H01L21/56 ; H01L23/498
摘要：
A semiconductor device includes a semiconductor substrate, a conductive pad on the semiconductor substrate, and a conductor over the conductive pad. The semiconductor device further has a polymeric material disposed over the semiconductor substrate and surrounding the conductor. The semiconductor device also includes an electric conductive layer between the conductor and the polymeric material. In the semiconductor device, an adhesion strength between the electric conductive layer and the polymeric material is greater than an adhesion strength between the polymeric material and the conductor.
公开/授权文献
- US20170053812A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 公开/授权日：2017-02-23
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