发明授权
- 专利标题： Semiconductor device
- 专利标题（中）： 半导体器件
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申请号： US14950777申请日： 2015-11-24
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公开(公告)号： US09559214B2公开(公告)日： 2017-01-31
- 发明人: Toshinari Sasaki
- 申请人： Japan Display Inc.
- 申请人地址： JP Tokyo
- 专利权人： Japan Display Inc.
- 当前专利权人： Japan Display Inc.
- 当前专利权人地址： JP Tokyo
- 代理机构： TYPHA IP LLC
- 优先权： JP2014-243840 20141202
- 主分类号： H01L29/786
- IPC分类号： H01L29/786 ; H01L29/417 ; H01L29/423 ; H01L29/66 ; H01L27/12
摘要：
A semiconductor device includes a first electrode, a first insulating layer having a first opening reaching the first electrode and having a ring-shaped first side wall exposed to the first opening, an oxide semiconductor layer on the first side wall, the oxide semiconductor layer being connected with the first electrode, a gate insulating layer on the oxide semiconductor layer, the oxide semiconductor layer being between the first side wall and the gate insulating layer, a gate electrode facing the oxide semiconductor layer on the first side wall, the gate insulating layer being between the oxide semiconductor layer and the gate electrode, and a second electrode above the first insulating layer, the second electrode being connected with the oxide semiconductor layer.
公开/授权文献
- US20160155851A1 SEMICONDUCTOR DEVICE 公开/授权日：2016-06-02
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