发明授权
- 专利标题: Chip comprising a phase change material based protecting device and a method of manufacturing the same
- 专利标题(中): 包含基于相变材料的保护装置的芯片及其制造方法
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申请号: US14996566申请日: 2016-01-15
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公开(公告)号: US09520366B2公开(公告)日: 2016-12-13
- 发明人: Yann Lamy , Luca Perniola
- 申请人: Commissariat a L'Energie Atomique et aux Energies Alternatives
- 申请人地址: FR Paris
- 专利权人: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
- 当前专利权人: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
- 当前专利权人地址: FR Paris
- 代理机构: Oblon, McClelland, Maier & Neustadt, L.L.P.
- 优先权: FR1550329 20150115
- 主分类号: H01L23/00
- IPC分类号: H01L23/00 ; H01L23/528 ; H01L27/24 ; H01L49/02
摘要:
An electronic chip including an integrated circuit arranged a face of a substrate, and a protection device arranged partially facing the integrated circuit is provided. The protection device includes a capacitor having a first electrode and a second electrode between which a layer of phase change material is disposed changing locally from a first resistive state to a second resistive state different from the first state by penetration of a beam. The first state is an amorphous state wherein the capacitor has a first capacitance and/or a first resistance and the second state is a crystalline state wherein the capacitor has a second capacitance and/or a second resistance different from the first capacitance and first resistance. The protection device is electrically connected to the integrated circuit by at least one of the first or second electrodes so that the integrated circuit measures the resistance and/or capacitance of the capacitor.
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